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三级管的饱和区和MOS管的饱和区-平衡积木

三级管的饱和区和MOS管的饱和区

发布于:2021-12-02 09:11:13

三级管的饱和区和MOS管的饱和区




mos:iDs不随Vds增加而增加;


bjt:iC不随iB的增加而增加;












典型VT=1V;












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N-MOS:高电*导通低电*断开;


高电*左边带正电质子,右边带负电电子,箭头指向右边板;








P-MOS:低电*导通高电*断开;


低电*左边带负电电子,右边带正电质子,箭头指向右边板;













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